Physica status solidi (b) 244, 2100 (2007)

Bài từ Tủ sách Khoa học VLOS.

Diffusion thermopower of a p-type Si/Si1-x Gex heterostructure at zero magnetic field
Diffusion thermopower of a p-type Si/Si1-x Gex heterostructure at zero magnetic field
Tạp chí physica status solidi (b) 2007 3 January, 2007; 244 (6):2100
Tác giả	Tran Doan Huana and Nguyen Phuc Haia, b
Nơi thực hiện	aInstitute of Engineering Physics, Hanoi University of Technology, 1 Dai Co Viet Road, Hanoi, Vietnam bFaculty of Engineering, Katholieke University of Leuven, Kasteelpark Arenberg 44, 3001 Heverlee (Leuven), Belgium
Từ khóa	diffusion thermopower, heterostructures, scattering
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Abstract

We calculate the diffusion thermopower of the degenerate two-dimensional hole gas in a p-type Si/Si1-x Gex lattice mismatched heterostructure at low temperatures and zero magnetic field. The effects of possible scatterings, e.g. remote impurity, alloy disorder, interface roughness, deformation potential, and random piezoelectric on the hole mobility and the diffusion thermopower are examined. Calculated results are well fitted to the experimental data recently reported. In addition, we predict a possibility for the diffusion thermopower to change its sign as the SiGe layer thickness changes, the effect has not been discussed yet. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)